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	半導体発光素子
	新田 康一; 小松原 正; 中村 優
	1995-04-26
著作权人	株式会社東芝
专利号	JP1995038458B2
国家	日本
文献子类	授权发明
其他题名	半導体発光素子
英文摘要	PURPOSE:To satisfy both enclosure of implanted carriers and reduction of a spreading resistance by providing clad layers of a balanced type semiconductor light emitting element which have a forbidden band width larger than an active layer and composing it out of a multilayer structure of different composition ratios. CONSTITUTION:On an N-GaAs substrate 11, an N-GaAs layer 12, N-GaAlAs clad layers 13, 14 and 15, a P-GaAs active layer 16 and a P-GaAlAs clad layer 17 are grown in the above order by an MOCVD method. The mixed crystal ratio of AlGs of the N-type clad layers 13 and 15 is 0.3-0.45, and the ratio of AlAs of the clad layer 14 is 0.1-0.25. In the LED of such constitution, the N-type clad layers 13-15 are larger than the width of a forbidden band of the active layer 16 so that the emitted light of the active layer 16 is not absorbed in the inside and is extracted. By the action of the clad layer 15, enclosure of the implanted carriers can be effected surely and by the action of the clad layer 14, the reduction of a spreading resistance can be contrived. Accordingly the enhancement of the output of light emitting characteristics can be contrived.
公开日期	1995-04-26
申请日期	1985-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89214]
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	新田 康一,小松原 正,中村 優. 半導体発光素子. JP1995038458B2. 1995-04-26.

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