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	Semiconductor laser device
	NAKATSUKA SHINICHI; ONO YUICHI; KAJIMURA TAKASHI
	1986-12-03
著作权人	HITACHI LTD
专利号	JP1986272988A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To prevent a crystal defect on crystal growth onto a substrate with a stepped section by previously forming a recess to the substrate and matching a waveguide, which is shaped to the upper section of a semiconductor laser and does not absorb laser beams, with an active layer on a laser end-surface. CONSTITUTION:An N-Ga0.55Al0.45As clad layer 9, an undoped Ga0.86Al0.14As active layer 10, a P-Ga0.55Al0.45As clad layer 11, a P-GA0.55Al0.45As layer 12, a P-Ga0.55Al0.45As layer 13 and a P-GaAs cap layer 14 are crystal-grown on an N-GaAs substrate 8, to which a groove is shaped, in succession. The layer 12 and the active layer 10 are superposed in the groove section in the substrate at that time. The outside of a stripe is etched while leaving the P-type clad layer in 0.1-0.4mum, and buried from the layer 13. In the structure, Cr/Au 14 as a P electrode and AuGeNi/Cr/Au 15 as an N electrode are evaporated, and the whole is cloven at the intervals of 300mum at the positions of broken lines, thus manufacturing laser chips.
公开日期	1986-12-03
申请日期	1985-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89183]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	NAKATSUKA SHINICHI,ONO YUICHI,KAJIMURA TAKASHI. Semiconductor laser device. JP1986272988A. 1986-12-03.

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