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	Control of current spreading in semiconductor laser diodes
	CONNOLLY, JOHN C.; DIMARCO, LOUIS A.
	2004-11-25
著作权人	TRUMPF PHOTONICS INC.
专利号	US20040233958A1
国家	美国
文献子类	发明申请
其他题名	Control of current spreading in semiconductor laser diodes
英文摘要	A semiconductor laser diode and method are described, wherein the path of the current through the device between the positive and negative conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer flanking a desired gain region. The implanted regions become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions can be selected so that the gain current only crosses a portion of the active layer that supports desired lateral modes of the laser light.
公开日期	2004-11-25
申请日期	2004-06-25
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89113]
专题	半导体激光器专利数据库
作者单位	TRUMPF PHOTONICS INC.
推荐引用方式 GB/T 7714	CONNOLLY, JOHN C.,DIMARCO, LOUIS A.. Control of current spreading in semiconductor laser diodes. US20040233958A1. 2004-11-25.

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