| Multi quantum well light emitting element | |
| YAMAZAKI HIROYUKI; KITAMURA MITSUHIRO | |
| 1991-02-08 | |
| 著作权人 | NEC CORP |
| 专利号 | JP1991030486A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi quantum well light emitting element |
| 英文摘要 | PURPOSE:To make carriers uniform in distribution so as to obtain a muliple quantum well light emitting element excellent in characteristics by a method wherein donors and acceptors are partly added to the P-clad layer side and the N-buffer layer side of a semiconductor thin film which constitutes an active layer respectively. CONSTITUTION:An N-InP buffer layer 2, a muliple quantum well active layer 3 composed of an InGaAs well layer 4 and an InP barrier layer 5, and a P-InP clad layer 6 are successively laminated on an InP substrate 1, and then a P- electrode 7 and an N-electrode 8 are provided to the P-InP clad layer 6 and the rear side of the substrate 1 to form a light emitting element. Moreover, donors are wholly added to the part of the active layer 3 close to the clad layer 6 and acceptors partly added to the part of the active layer 3 close to the buffer layer 2. |
| 公开日期 | 1991-02-08 |
| 申请日期 | 1989-06-28 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI HIROYUKI,KITAMURA MITSUHIRO. Multi quantum well light emitting element. JP1991030486A. 1991-02-08. |
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