Semiconductor laser
CAPASSO, FEDERICO; CHO, ALFRED YI; FAIST, JEROME; HUTCHINSON, ALBERT LEE; SIRTORI, CARLO; SIVCO, DEBORAH LEE
2000-03-01
著作权人AT&T IPM CORP.
专利号EP0757418B1
国家欧洲专利局
文献子类授权发明
其他题名Semiconductor laser
英文摘要The disclosed unipolar quantum cascade (QC) laser comprises a multiplicity of essentially identical active regions, with adjacent active regions separated by a superlattice carrier injection/relaxation region (11). A given active region (10) contains a single quantum well (13) with at least two electron states. Lasing is obtained without global intersubband population inversion. Instead, there is believed to exist local population inversion in a small region of k-space near k=0, corresponding to electron energies approximately within an optical phonon energy (∼35meV) from the bottom of the lower subband. A design feature that can be used to improve the thermal characteristics of substantially any QC laser is also disclosed.
公开日期2000-03-01
申请日期1996-07-23
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/88869]  
专题半导体激光器专利数据库
作者单位AT&T IPM CORP.
推荐引用方式
GB/T 7714
CAPASSO, FEDERICO,CHO, ALFRED YI,FAIST, JEROME,et al. Semiconductor laser. EP0757418B1. 2000-03-01.
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