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	Optical semiconductor device
	ISHIKAWA HIROSHI
	1990-02-08
著作权人	FUJITSU LTD
专利号	JP1990039467A
国家	日本
文献子类	发明申请
其他题名	Optical semiconductor device
英文摘要	PURPOSE:To assure an optical modulated output with sufficient intensity with reduced loss of a light amount and without need of axial alignment by integrally providing an optical modulation silicon and an amplifier section and forming an optical path disposed on the same optical axis and having an amplifying and modifying function. CONSTITUTION:An n type semiconductor substrate 1 includes thereon an amplification active region 2 of n type high resitivity with a gap wavelength corresponding to a signal light wavelength and a modulation active region 3 of i type high resitivity with a gap wavelength corresponding to shorter wavelengths (higher energy) than the signal light wavelength. Further, p type upper regions 4a, 4b are formed on the modulation active region 3, and a semi-insulating region 5 is provided therebetween. An input light signal is rendered to optical absorption dependent on back bias in the modulation active region 3, and further to amplification in the amplification active region 2 on the same optical axis, and is outputted. Since the modulation and amplification are efceted in an integrated structure to reduce attenuation and raise noise-resistant characteristics.
公开日期	1990-02-08
申请日期	1988-07-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88852]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	ISHIKAWA HIROSHI. Optical semiconductor device. JP1990039467A. 1990-02-08.

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