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	Phase-locked type semiconductor laser array and its manufacture
	HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI
	1990-02-01
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1990031485A
国家	日本
文献子类	发明申请
其他题名	Phase-locked type semiconductor laser array and its manufacture
英文摘要	PURPOSE:To be oscillated in a 0 deg.-phase mode up to a high output by a method wherein a high coupling region which reduces an oscillation gain in a 180 deg.-phase mode and increases an oscillation gain in a 0 deg.-phase mode is provided in one part of each light waveguide. CONSTITUTION:A beam generated in an active layer 15 with reference to a semiconductor layer 19 creeps, via a second clad layer 17, to a part 19a which has not been made disordered, but does not creep to a disordered part 19b. Accordingly, a light waveguide is constituted of the following: the semiconductor layer 19a of a p-type Al0.5Ga0.5As/GaAs multiple-quantum-well structure; a part corresponding to the semiconductor layer 19a of the multiple-quantum-well structure of the second clad layer 17 and the active layer 15. In addition, wide parts 19c, 19d in the semiconductor layer 19a of the multiple-quantum-well structure become high coupling regions. Thereby, the coupling efficiency between adjacent light waveguides is increased in the high coupling regions; in addition, 180 deg.-phase modes are offset mutually and 0 deg. modes are increased mutually; accordingly, a gain of the 180 deg.-phase modes is reduced relatively and a gain of the 0 deg.-phase modes is increased.
公开日期	1990-02-01
申请日期	1988-07-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88687]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Phase-locked type semiconductor laser array and its manufacture. JP1990031485A. 1990-02-01.

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