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	Manufacture of semiconductor laser element
	TAKAMORI TAKESHI; FUKUNAGA TOSHIAKI; WATANABE KENJI
	1992-10-28
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1992305990A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser element
英文摘要	PURPOSE:To obtain a semiconductor laser element, which easily and effectively traps current and ensures good yield, on the substrate surface having the stepped region having the plane (N11)A where N is under 5 by the molecular beam epitaxial growth method. CONSTITUTION:In the method of manufacturing a semiconductor laser element, a p-GaAs (100) substrate 11 having with a stepped portion having the plane (N11)A where N is under 5 is prepared. A current block layer 23 of the N-P inverse bias junction is formed on the stepped region of the substrate by the molecular beam epitaxial growth method in order to trap the light beam and the polarity of bipolar dopant is controlled to form an inverse bias structure for current trapping.
公开日期	1992-10-28
申请日期	1991-04-03
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88548]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TAKAMORI TAKESHI,FUKUNAGA TOSHIAKI,WATANABE KENJI. Manufacture of semiconductor laser element. JP1992305990A. 1992-10-28.

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