| Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer | |
| KAWAHARA, TAKAHIKO; FURUKAWA, MASATO | |
| 2007-11-08 | |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 专利号 | US20070258498A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer |
| 英文摘要 | A semiconductor laser diode (LD) has been disclosed, where the emission efficiency is independent on a thickness of the p-type cladding layer. The LD provides a first semiconductor region made of group III-V compound semiconductor material, a mesa region and a burying region. The burying region, disposed on the first region, buries the mesa region. The mesa region includes an active layer, a cladding layer with a first conduction type, another cladding layer with second conduction type and a contact layer with the second conduction type. The LD of the invention in the contact layer thereof contains aluminum (Al) and indium (In) for group III element, while, arsenic (As) for group V element. |
| 公开日期 | 2007-11-08 |
| 申请日期 | 2007-04-24 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88466]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | KAWAHARA, TAKAHIKO,FURUKAWA, MASATO. Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer. US20070258498A1. 2007-11-08. |
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