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	Semiconductor laser device
	ISHII MITSUO
	1988-07-21
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988177490A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a semiconductor laser device which can deflect and scan a radiating laser beam at high speed without the need for a mechanical and external driving system by a method wherein a light-guide region formed by being linked with an active region inside an active layer in the radiating direction of the laser beam and a control electrode to partially inject a carrier into the light-guide region are formed. CONSTITUTION:At a semiconductor laser device where a lower clad layer 2, an active layer 3 and an upper clad layer 4 are deposited in succession on a semiconductor substrate 1, the following are formed: a light-guide region 5 which is formed by being linked with an active region 3a inside the active layer 3 and whose energy gap is bigger than that of the active region 3a; control electrodes 8-10 which are used to inject a carrier into the light-guide region 5 partially. For example, if biases V8-V10 to be applied to the control electrodes 8-10 are set to appropriate values of V8>V9>V10, a beam of light whose phase is uniform up to the active region 3a is phase-modulated at the light-guide region 5; a laser beam 14 is deflected at an angle thetafrom the edge face of a resonator toward the control electrode 10 and is then radiated. By this method, a high-speed scanning operation is possible as compared with a mechanical deflection and scanning operation of the laser beam.
公开日期	1988-07-21
申请日期	1987-01-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88403]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ISHII MITSUO. Semiconductor laser device. JP1988177490A. 1988-07-21.

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