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	Manufacture of compound semiconductor crystal layer
	NISHIKAWA YUKIE; SUGAWARA HIDETO
	1991-10-04
著作权人	株式会社東芝
专利号	JP1991225918A
国家	日本
文献子类	发明申请
其他题名	Manufacture of compound semiconductor crystal layer
英文摘要	PURPOSE:To vary resistivity and fabricate semiconductor laser, etc., which utilizes layers for current constriction or photoconductive waves by a method wherein when InGaAlP is grown on a GaAs substrate, Zn is used as impurities, composition of Al is a specific value or larger and a ratio of a mol flow rate of III-group material to a mol flow rate of V-group material (V/III ratio) is a specific value or smaller. CONSTITUTION:Semiconductor laser is structured wherein after an Si-doped In0.5Ga0.15Al0.35Pn clad layer 22, an In0.5Ga0.5P layer active layer 23, a Zn-doped In0.5Ga0.15Al0.35P clad layer 24, a p-In0.5Ga0.5P etching stop layer 25 and a Zn- doped In0.5Ga0.15Al0.35P highly resistant layer 26 are sequentially grown on an n-GaAs substrate 21, a stripe state is formed on the highly resistant layer by means of etching, and then a p-In0.5Ga0.2Al0.3P coating layer 27 and a p-GaAs contact layer 28 are grown. When the highly resistant layer (whose resistivity is 10OMEGA.cm or higher) is to be formed with Zn used as dopant in an In1-x-yGaxAly, a V/III ratio is made 200 or less. In this laser structure, the highly resistant layer constricts current as well as prevents light from oozing out.
公开日期	1991-10-04
申请日期	1990-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88362]
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	NISHIKAWA YUKIE,SUGAWARA HIDETO. Manufacture of compound semiconductor crystal layer. JP1991225918A. 1991-10-04.

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