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	Method of growing compound semiconductor layer
	HIROTAKA, KIZUKI; YASUTOMO, KAJIKAWA
	1996-07-10
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	GB2296816A
国家	英国
文献子类	发明申请
其他题名	Method of growing compound semiconductor layer
英文摘要	The method includes epitaxially growing a III-V group compound semiconductor layer 2 including nitrogen (N) for group V element on a front surface of a semiconductor substrate 1 comprising cadmium telluride (CdTe). Therefore, the crystal lattices of the III-V group compound semiconductor layer 2 are lattice-matched with the crystal lattices of the CdTe semiconductor substrate 1 at a prescribed period, whereby the III-V group compound semiconductor layer 2 is epitaxially grown with high crystalline quality. The layer 2 is grown by MOCVD, MBE, GSMBE, CBE, VPE or ALE and may be used in a laser.
公开日期	1996-07-10
申请日期	1995-12-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88337]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	HIROTAKA, KIZUKI,YASUTOMO, KAJIKAWA. Method of growing compound semiconductor layer. GB2296816A. 1996-07-10.

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