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	Manufacture of light-emitting element
	NAKAJIMA KAZUO
	1986-12-20
著作权人	FUJITSU LTD
专利号	JP1986290790A
国家	日本
文献子类	发明申请
其他题名	Manufacture of light-emitting element
英文摘要	PURPOSE:To obtain a high resistor having a large energy gap by adding one or a plurality of Fe, Co, Ni or to AlGaInAs or AlInAs, growing the elements in a liquid phase and forming a buried layer. CONSTITUTION:A buffer layer 2, an active layer 3, a clad layer 4 and an electrode layer 5 are grown on an N-InP substrate 1 in a liquid-phase epitaxial manner. A mask such as an silicon nitride mask is shaped to the surface of the center, and a buried layer section is removed through etching. A high resistance layer in which Fe, Co, Ni and Cr are doped to AlGaInAs or AlInAs is grown in the liquid-phase epitaxial manner to form a desired buried layer 10. AlGaIn or AlInAs to which these Fe, etc. are doped can be lattice-matched with the InP substrate, thus increasing Eg at high resistance.
公开日期	1986-12-20
申请日期	1985-06-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88257]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	NAKAJIMA KAZUO. Manufacture of light-emitting element. JP1986290790A. 1986-12-20.

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