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	Manufacture of semiconductor laser
	ONOUCHI TOSHIHIKO; NOJIRI HIDEAKI
	1991-05-28
著作权人	CANON INC
专利号	JP1991125489A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To provide a high-efficiency semiconductor laser while improving production efficiency and device reliability by a method in which semiconductor GaAs is formed in stripes on a wafer and the wafer is subjected to two steps of liquid phase epitaxy. CONSTITUTION:A mask layer is etched with HCl and H2O2 to form a strip of mask 20. A cap layer 15 is exposed where the mask layer has been removed. The cap layer and Ga malt at a degree of saturation T=-5 deg.C are brought into contact by liquid phase epitaxy at 800 deg.C so as to melt the other portions dow by 3mum than under the mask 20. The etched mask has a side angle 60 deg.C irrespective of surface orientation. Two kinds of Ga melts at a degree of super saturation ALPHAT=5 deg.C are applied for recrystallization of a p-type buried AlGaAs layer 16 and a n-type AlGaAs layer 17. When the proportion of aluminum in the mixed crystal is 0.3, the interfaces with the buried layers are at the same level as the active layer under the conditions of the growth time of 22 seconds and 4 minutes for layers 16 and 17, respectively.
公开日期	1991-05-28
申请日期	1989-10-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88106]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	ONOUCHI TOSHIHIKO,NOJIRI HIDEAKI. Manufacture of semiconductor laser. JP1991125489A. 1991-05-28.

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