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	Semiconductor laser
	ODAGIRI YUICHI
	1987-07-28
著作权人	NEC CORP
专利号	JP1987171176A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To realize a low-current threshold at 5mA of one figure under the state of room temperature while enabling the mount mounting of a junction- down, and to dissipate heat excellently by coating the whole periphery except the central section of an active layer on the side far from a semiconductor substrate with the same conductivity type semiconductor layer, coating only the central section with a different conductivity type semiconductor layer and burying the whole with a semiconductor layer so that an electrode surface on the side near the active layer is flattened. CONSTITUTION:The whole periphery of a non-doped InGaAsP active layer 3 is surrounded by an N-type InP layer, and a P-type InP clad layer 9 is brought into contact slightly with only the central section of the non-doped InGaAsP active layer 3. Consequently, holes injected from a P side electrode 11 are passed through the central section of the non-doped InGaAsP active layer 3. Accordingly, recombination with electrons is limited to the central section of the non- doped InGaAsP active layer 3. The effective width of the non-doped InGaAsP active layer 3 is inhibited at a small value such as approximately 2mum even at the central section, thus satisfying single transverse mode oscillation in a long-wave length range.
公开日期	1987-07-28
申请日期	1986-01-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87992]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ODAGIRI YUICHI. Semiconductor laser. JP1987171176A. 1987-07-28.

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