| Semiconductor laser | |
| OISHI AKIO; TSUJI SHINJI; HIRAO MOTONAO; MATSUMURA HIROYOSHI | |
| 1987-12-22 | |
| 著作权人 | HITACHI LTD |
| 专利号 | JP1987295479A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To omit a diffusing step by setting the composition of a surface p-type InGaAsP layer to 0.9eV or lower of a band width to set the contact resistance of electrodes to 1/2 or less of the conventional one. CONSTITUTION:An actively layer 9 and a p-type InP clad layer 10 are seqnentially grown by a liquid phase growth on an N-type InP substrate 2. After a multilayer wafer is mesa etched to form a mesa stripe, a P-type InP layer 3, an N-type InP current blocking layer 4, a P-type InP layer 5 and a p-type InGaASP layer 6 are sequentially grown by liquid growth. Here, the composition of the layer 6 is set to a band width-0.8eV. Thus, even if a P-side electrode is formed on the narrow stripe region of 10mum wide without diffusing Zn or Cd in the layer 6, an element resistor having 6 ohms or lower can be obtained. |
| 公开日期 | 1987-12-22 |
| 申请日期 | 1986-06-16 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87930]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OISHI AKIO,TSUJI SHINJI,HIRAO MOTONAO,et al. Semiconductor laser. JP1987295479A. 1987-12-22. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论