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	Semiconductor laser
	OMURA ETSUJI
	1989-11-27
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989292880A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser with window structure and a low threshold current by creating a light waveguide path at a window structure part near the edge surface of a resonator. CONSTITUTION:When there is no difference in reflection index in horizontal direction of a crank part 208 or there is no waveguide structure, a laser beam 220 expands greatly. But, by providing a waveguide mechanism at the crank part 208, the laser beam 220 returns to an active area 207 after being reflected on the edge surface of resonator without spreading and scattering of laser light can be ignored. Thus, increase in threshold value can be prevented. Thus, by forming a ridge-type light waveguide path at the crank part which is in window structure, a semiconductor laser with improved reliability can be obtained.
公开日期	1989-11-27
申请日期	1988-05-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87909]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	OMURA ETSUJI. Semiconductor laser. JP1989292880A. 1989-11-27.

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