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	Semiconductor laser element
	KAMETANI MASAAKI; FUJIWARA KENZO; TOKUDA YASUKI; MITSUNAGA KAZUMASA; OTA ATSUSHI; KOJIMA KEISUKE
	1988-05-16
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988110687A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To permit output beams to be deflected without having an effect on operating conditions of a semiconductor laser and to have sufficient deflection angles by controlling the amount of electric currents injected to respective third electrodes and then, by controlling the deflection angles of the laser beams that are emitted from an optical waveguide. CONSTITUTION:Output beams are emitted from an end face through an optical waveguide 12 located at a part where the third electrodes 13 are formed. Thereby, if electric currents injected by respective third electrodes 13a-13f make a refraction factor of the optical waveguide 12 larger locally, the laser beams pass through a part where its refraction factor has increased. Therefore, a part having the high refraction factor is oscillated laterally and the output beams are deflected by controlling the electric currents injected to respective third electrodes 13a-13f. Although in such a case, the amount of the electric currents is, for instance, several tens of mA and even the electric currents flowing into an active layer 3 is also several tens of mA, respective third electrodes 13a-13f have gradually a larger amount of the electric currents as these electrodes direct the laser beams to the direction desired to be more deflected. In this way, as the laser beams are deflected by controlling the amount of the electric currents impressed to the electrodes 13 at an external guided wave region 15, they can be deflected without having an effect on their output powers.
公开日期	1988-05-16
申请日期	1986-10-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87902]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KAMETANI MASAAKI,FUJIWARA KENZO,TOKUDA YASUKI,et al. Semiconductor laser element. JP1988110687A. 1988-05-16.

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