| Semiconductor laser element | |
| IJICHI TETSURO; KIKUTA TOSHIO | |
| 1992-12-25 | |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 专利号 | JP1992372188A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a semiconductor laser element having practical reliability in a wavelength range of 0-2mum and oscillates with a low threshold value and high efficiency while also improving an InGaAs/GaAs distortion quantum well semiconductor laser element covering a wavelength range of 0.87-0mum. CONSTITUTION:An InyGa1-yP clad layer 3, an InzGa1-zAs optical confinement layer 4, an InxDa1-xAs single distortion quantum well active layer 5, an InzGa1-zAs optical confinement layer 6 and an InyGa1-y P clad layer 7 are laminated successively on an InzGa1-zAs substrate |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1991-06-20 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87703]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IJICHI TETSURO,KIKUTA TOSHIO. Semiconductor laser element. JP1992372188A. 1992-12-25. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论