QQ客服 官方微博 反馈留言

	半導体レ-ザの製造方法
	山口 昭夫
	1994-11-30
著作权人	富士通株式会社
专利号	JP1994097706B2
国家	日本
文献子类	授权发明
其他题名	半導体レ-ザの製造方法
英文摘要	PURPOSE:To enhance the current stopping function of a current stopping layer by a method wherein the thickness of the current stopping layer is larger than the depth of a groove. CONSTITUTION:An undoped N type InP current stopping layer 8a is selectively grown in a groove 7 until it is higher by approximately 2mum than the surface of a clad layer 4 by the vapor phase growth (VPE) method. In this process, the current stopping layer 8a does not grow out of the region of the groove 7. Next, by using the LPE method, a P-type InP flattening layer 13 [Zn-doped, P 3X10cm] is grown, which continues until the surface is roughly flat. A process follows wherein photolithography is employed for the formation of an approximately 0.3mum-thick SiO2 insulating film 9 wherein an approximately 3mum-wide opening is to be so provided that a light-emitting section may roughly coincide with the middle. Metal electrodes 11 and 12 are built and cleaving is accomplished for an approximately 300mum-long oscillator for completion.
公开日期	1994-11-30
申请日期	1986-02-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87671]
专题	半导体激光器专利数据库
作者单位	富士通株式会社
推荐引用方式 GB/T 7714	山口 昭夫. 半導体レ-ザの製造方法. JP1994097706B2. 1994-11-30.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。