QQ客服 官方微博 反馈留言

	Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
	KONDO, TAKASHI; TAKEDA, KAZUTAKA; NAKAYAMA, HIDEO
	2013-07-25
著作权人	FUJI XEROX CO., LTD.
专利号	US20130188993A1
国家	美国
文献子类	发明申请
其他题名	Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
英文摘要	A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror formed on the substrate including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer formed on the first semiconductor multi-layer reflecting mirror, having an optical film thickness greater than an oscillation wavelength, and including Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror formed on the active region and including a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn.
公开日期	2013-07-25
申请日期	2012-07-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87628]
专题	半导体激光器专利数据库
作者单位	FUJI XEROX CO., LTD.
推荐引用方式 GB/T 7714	KONDO, TAKASHI,TAKEDA, KAZUTAKA,NAKAYAMA, HIDEO. Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device. US20130188993A1. 2013-07-25.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。