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	Semiconductor laser device
	SASAKI YOSHIMITSU; KAJIMURA TAKASHI; KAYANE NAOKI; NAKAMURA MICHIHARU
	1984-08-21
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1984145588A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To improve the electric and optical characteristics of a semiconductor laser device, and to lengthen life on a high-output operation by coating the light-emitting output end surfaces of the semiconductor laser device so that one side reflects beams to a high degree and the other side reflects them to a low degree. CONSTITUTION:An end surface on one side is coated with first dielectric film SiO2 (a refractive index n1:45) in film thickness of lambda/4n1, 140nm, by the discharge of Ar gas by using SiO2 as a target (lambda is the oscillation wavelength of a laser). An end surface on the other side is coated with second dielectric film SiO2 (a refractive index n2=45) in film thickness of lambda/4n2, 140nm, through the same method. The target is changed over to Si, Ar gas is discharged under the state in which H2 gas is mixed into Ar gas by approximately 50% at the ratio of partial pressure, and the second dielectric film SiO2 is coated with third dielectric film amorphous Si (a refractive index n3:3.3) in film thickness of lambda/4n3, 60nm. Likewise, the third dielectric film amorphous film Si is coated with fourth dielectric film SiO2 in 140nm and fifth dielectric film amorphous Si in 60nm. The reflectivity of a low reflection film (a first dielectric film) is brought to approximately 7% and that of high reflection films (second - fifth dielectric films) to approximately 90% through said processes, and differential efficiency and a kink level are improved.
公开日期	1984-08-21
申请日期	1983-02-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87542]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	SASAKI YOSHIMITSU,KAJIMURA TAKASHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1984145588A. 1984-08-21.

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