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	Manufacture of semiconductor laser
	IWATA HIROSHI
	1986-09-20
著作权人	NEC CORP
专利号	JP1986212083A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To obtain a laser having a two-dimensional quantum well structure, by selectively etching the cross section of a cyclic superlattice structure to provide a crystal face undulated in a short cycle, and providing a trapping layer and a quantum well layer on that crystal face. CONSTITUTION:A first current-trapping layer 11 of I-type Al0.7Ga0.3As, a superlattice layer 14 formed of alternately deposited N-type Al0.3Ga0.7As sublayers 12 and N-type Al0.7Ga0.3As sublayers 13, and a second current-trapping layer 15 of I-type Al0.7Ga0.3As are provided by crystal growth on an insulating GaAs substrate 10. The structure is cleaved to provide a cross section. The layers 12 are selectively etched from the cross section to provide an undulated face 16. A first guide layer 100 of Al0.3Ga0.7As, a GaAs quantum well layer 101, a second guide layer 102 of Al0.3Ga0.7As, a P-type Al0.7Ga0.3As clad layer 103 and a P-type GaAs cap layer 104 are formed in that order on the cross section. Finally, a positive electrode 105 and a negative electrode 106 are provided.
公开日期	1986-09-20
申请日期	1985-03-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87352]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	IWATA HIROSHI. Manufacture of semiconductor laser. JP1986212083A. 1986-09-20.

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