| Nitride semiconductor light emitting device | |
| KAWAGUCHI, YOSHINOBU; KAMIKAWA, TAKESHI | |
| 2016-02-04 | |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 专利号 | US20160036197A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor light emitting device |
| 英文摘要 | A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm. |
| 公开日期 | 2016-02-04 |
| 申请日期 | 2015-10-13 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87242]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI, YOSHINOBU,KAMIKAWA, TAKESHI. Nitride semiconductor light emitting device. US20160036197A1. 2016-02-04. |
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