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	Semiconductor laser
	OISHI AKIO; KURODA TAKARO; TSUJI SHINJI; HIRAO MOTONAO; MATSUMURA HIROYOSHI
	1987-06-26
著作权人	HITACHI LTD
专利号	JP1987143489A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To easily form a current blocking layer with sufficient controllability, in the deep part of crystal layer, by performing ion implantation in a buried- growth layer to form a current blocking layer after a mesa containing an active layer is buried with the same conduction type layer and is grown. CONSTITUTION:After an InGaAsP active layer and a P-type InP clad layer 6 are grown on an N-type InP substrate, a whole part is eliminated by etching, while the active layer of 0.5-2mum thick is left thereon. Then the whole part containing a mesa is buried with a P-type InP layer, and an InGaAsP cap layer is grown on its surface. Ion implantation of S, Se or Si is performed excepting the part to be a current path, and an N-type InP layer is formed by an annealing treatment. Comparing with a burying structure wherein a P-type layer and an N-type layer are selectively grown on the both sides of a mesa in the time of buried-growth, a current blocking layer can be easily formed thereby. It is also easily achieved to form an N-type layer in a P-type layer applying ion implantation.
公开日期	1987-06-26
申请日期	1985-12-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87182]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OISHI AKIO,KURODA TAKARO,TSUJI SHINJI,et al. Semiconductor laser. JP1987143489A. 1987-06-26.

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