QQ客服 官方微博 反馈留言

	Semiconductor laser device
	UOMI, KAZUHISA; OHTOSHI, TSUKURU; TSUCHIYA, TOMONOBU; SASAKI, SHINJI; CHINONE, NAOKI
	1991-12-17
著作权人	OPNEXT JAPAN, INC.
专利号	US5073892
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device
英文摘要	A semiconductor laser device of the field modulation type includes a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adopted as the structure in which the threshold carrier density is reduced.
公开日期	1991-12-17
申请日期	1990-06-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87102]
专题	半导体激光器专利数据库
作者单位	OPNEXT JAPAN, INC.
推荐引用方式 GB/T 7714	UOMI, KAZUHISA,OHTOSHI, TSUKURU,TSUCHIYA, TOMONOBU,et al. Semiconductor laser device. US5073892. 1991-12-17.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。