| Nitride semiconductor light-emitting device | |
| KASUGAI, HIDEKI; ORITA, KENJI; OHNO, HIROSHI; YAMANAKA, KAZUHIKO | |
| 2015-01-27 | |
| 著作权人 | PANASONIC CORPORATION |
| 专利号 | US8942269 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light-emitting device |
| 英文摘要 | A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer. |
| 公开日期 | 2015-01-27 |
| 申请日期 | 2013-09-17 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87009]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | KASUGAI, HIDEKI,ORITA, KENJI,OHNO, HIROSHI,et al. Nitride semiconductor light-emitting device. US8942269. 2015-01-27. |
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