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	SELECTIVE AREA METAL BONDING Si-BASED LASER
	QIN, GUOGANG; HONG, TAO; CHEN, TING; RAN, GUANGZHAO; CHEN, WEIXI
	2010-05-06
著作权人	PEKING UNIVERSITY
专利号	US20100111128A1
国家	美国
文献子类	发明申请
其他题名	SELECTIVE AREA METAL BONDING Si-BASED LASER
英文摘要	A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide area from the bonding area; forming a metal multilayer for bonding, which also acts as ohmic contact layer in the laser when the laser is electrically pumped. A compound semiconductor optical gain structure is prepared by epitaxial growth and etched off the substrate. The compound semiconductor optical gain structure is aligned with the Si waveguide area in the SOI wafer and the compound semiconductor optical gain structure is bonded on the SOI wafer. The selective area metal bonding Si-based laser can be used as a light source in optoelectronic integration and Si photonics. The method may provide simple operation, flexibility, low cost, and low requirement for cleanness of manufacturing environments.
公开日期	2010-05-06
申请日期	2009-08-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86997]
专题	半导体激光器专利数据库
作者单位	PEKING UNIVERSITY
推荐引用方式 GB/T 7714	QIN, GUOGANG,HONG, TAO,CHEN, TING,et al. SELECTIVE AREA METAL BONDING Si-BASED LASER. US20100111128A1. 2010-05-06.

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