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	Surface emission semiconductor laser with lateral electrode contact
	LURYI, SERGEY; XIE, YA-HONG
	1991-08-07
著作权人	AT&T CORP.
专利号	EP0439929A1
国家	欧洲专利局
文献子类	发明申请
其他题名	Surface emission semiconductor laser with lateral electrode contact
英文摘要	A vertical laser 100 is typically formed by successive horizontal layers 103 suitable for forming a bottom mirror, epitaxially grown on a substrate 101, a bottom cladding layer 104, an active region 105, a top cladding layer 106, and a top mirror 107. In prior art, one of a pair of electrodes for enabling electrical pumping the laser--the "top" electrode 110-- is attached to the top surface of the top mirror, whereby undesirably large amounts of heat are generated because of the relatively high impedance of the top mirror. To reduce this heat generation, the laser is redesigned to enable the top electrode 110 to make lateral contact with the top cladding layer 106, whereby the impedance and hence the power loss are reduced.
公开日期	1991-08-07
申请日期	1990-12-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86969]
专题	半导体激光器专利数据库
作者单位	AT&T CORP.
推荐引用方式 GB/T 7714	LURYI, SERGEY,XIE, YA-HONG. Surface emission semiconductor laser with lateral electrode contact. EP0439929A1. 1991-08-07.

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