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	Multipled wavelength type buried hetero-structure semiconductor laser array
	KITAMURA MITSUHIRO
	1982-11-16
著作权人	NIPPON DENKI KK
专利号	JP1982186384A
国家	日本
文献子类	发明申请
其他题名	Multipled wavelength type buried hetero-structure semiconductor laser array
英文摘要	PURPOSE:To obtain the laser arrays, oscillating wavelengths therefrom largely differ, easily by mutually making the energy gaps of the active layers of adjacent lasers differ and using a section between the adjacent lasers as a current block layer. CONSTITUTION:An N type buffer layer 502, the active layer 503 having the composition of 3mum wavelengths and a P type clad layer 504 are grown successively onto an N type substrate 50 The surface is etched up to a section deeper than the layer 503 by using an SiO2 film 505 as an etching mask, and an N type buffer layer 506, the active layer 507 having the compositon of 5mum wavelength and a P type clad layer 508 are grown successively through epitaxial growth as the film 505 is left as it is. Mesas 509, 510, are shaped so as to leave the approximately central sections of the layers 503, 507. The P type current block layer 511, the N type current block layer 512, a P type clad layer 513 and an N type gap layer 514 are grown successively to a wafer etched in mesa form, and a P sid electrode 517 and an N side electrode 518 are shaped. Accordingly, the laser array having high performance is obtained because strain, etc. on the interface of growth are removed through mesa etching.
公开日期	1982-11-16
申请日期	1981-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86900]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO. Multipled wavelength type buried hetero-structure semiconductor laser array. JP1982186384A. 1982-11-16.

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