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	Etching of algainp crystal
	SHONO MASAYUKI; HONDA MASAHARU; HAMADA HIROYOSHI
	1990-10-23
著作权人	三洋電機株式会社
专利号	JP1990260636A
国家	日本
文献子类	发明申请
其他题名	Etching of algainp crystal
英文摘要	PURPOSE:To form a ridge, whose side surfaces have a large angle of inclination, by a method wherein an AlGaInP crystal is etched using a hydrobromic acid. CONSTITUTION:In a semiconductor laser of a prescribed structure, a hydrobromic acid containing 47% of HBr and a hydrochloric acid-phosphoric acid mixed solution of HCl:H3PO4=1:6 are used as an etching liquid for forming a ridge of a clad layer 4. At this time, a face (1-1-1) appears on each side surface of the ridge 5 and the angle of inclination of the face (1-1-1) becomes 55 deg. and is larger than the angle of inclination which is formed by a conventional method. If the layer 4 is generally a (AlxGa1-x)yIn1-yP (0<=x, Y<=1) crystal, the face (1-1-1) appears on each side surface of the ridge. In case an AlGaAsP multilayer film containing a GaAs layer is simultaneously etched, an oxidizing reagent like a nitric acid is added to the hydrobromic acid. An etching rate can be changed by adding a dilution substance, such as water and the like. By this constitution, a threshold current can be reduced and a stable transverse mode can be controlled in a ridge waveguide type laser.
公开日期	1990-10-23
申请日期	1989-03-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86839]
专题	半导体激光器专利数据库
作者单位	三洋電機株式会社
推荐引用方式 GB/T 7714	SHONO MASAYUKI,HONDA MASAHARU,HAMADA HIROYOSHI. Etching of algainp crystal. JP1990260636A. 1990-10-23.

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