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	Formation of end face film of semiconductor laser
	MATOBA AKIHIRO; KAWAI YOSHIO; KAWAHARA MASATO; SERIZAWA YUKA
	1987-09-22
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1987216387A
国家	日本
文献子类	发明申请
其他题名	Formation of end face film of semiconductor laser
英文摘要	PURPOSE:To shade portions except end faces when end face films are coated and enable the end face films to be formed only on desired portions by preparing a support substrate formed with a groove therein, putting a semiconductor laser element piece in the groove with a resonator end face upward and coating a resonator end face film by evaporation, sputtering or the like. CONSTITUTION:A support substrate 5 is a silicon substrate and formed with a groove cut by a dicing saw to prescribed width and depth. A semiconductor laser element piece 1 is put in the groove of the support substrate 5 with a resonator end face upward and inclined relative to the groove. Then, a film is coated from a direction shown by an arrow 6 to form a resonator end face film. In coating the film, particles for forming the film are left fly from the direction 6 wherein the upper surface of the semiconductor laser element piece 1 is shaded by the resonator end face and the lower surface of the element piece 1 shaded by the upper surface of the support substrate 5. Thus, the film is formed only on the resonator end face 1b.
公开日期	1987-09-22
申请日期	1986-03-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86817]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	MATOBA AKIHIRO,KAWAI YOSHIO,KAWAHARA MASATO,et al. Formation of end face film of semiconductor laser. JP1987216387A. 1987-09-22.

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