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	Semiconductor laser
	NARUI HIRONOBU; OHATA TOYOJI; MORI YOSHIFUMI
	1990-07-05
著作权人	ソニー株式会社
专利号	JP1990174287A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To acquire a semiconductor laser of a low threshold current of stable characteristics by forming a current block layer inside a mesa groove which forms a mesa protrusion in contact with a side of an active layer which is formed on the mesa protrusion through epitaxial growth extending over an entire thickness of the active layer, and by interposing it between first and second clad layers of second conductivity type. CONSTITUTION:An active layer 44 which becomes an operation region formed on a mesa protrusion 42 of a substrate 41 is interposed between a clad layer 43 of a first conductivity type and a first clad layer 45 of a second conductivity type, and a transverse direction thereof is made a BH structure which is enclosed with a current block layer 46. Both sides of the active layer 44 are controlled on an extensions of a slope 49 made by a crystal face 111B generated on a clad layer 2 of the first conductivity type, and also controlled by a current block layer 46 of the first conductivity type. That is, to make a protrusion 42 nearly a forward mesa, the current block layer 46 is formed as a surely flat surface 311 at both sides of an active layer 44 as a light emitting section which is interposed therebetween extending over the entire thickness thereof.
公开日期	1990-07-05
申请日期	1988-12-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86690]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	NARUI HIRONOBU,OHATA TOYOJI,MORI YOSHIFUMI. Semiconductor laser. JP1990174287A. 1990-07-05.

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