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	Manufacture of semiconductor laser
	ABE YUJI; OTSUKA KENICHI; SUGIMOTO HIROSHI; OISHI TOSHIYUKI; MATSUI TERUHITO
	1990-04-26
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990114588A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To limit the number of crystal growth operations to two by a method wherein an island-shaped stripe of an active layer is surrounded by a stripe of a waveguide layer and a side part is filled by a mass transport method. CONSTITUTION:The following two are formed: a first semiconductor layer 4 whose forbidden band width is smaller than that of a semiconductor substrate 1 where a stripe-shaped groove of a waveguide part connected to stripe-shaped grooves on both sides of a light-emitting part has been formed; a second semiconductor layer 2 whose forbidden band width filling the groove is smaller than that of the semiconductor substrate 1 and larger than that of the first semiconductor layer 4. After that, a third semiconductor layer 13, of a second conductivity type, whose forbidden band width is larger than that of the second semiconductor layer 2 is grown; the third semiconductor layer 13 and the first semiconductor layer 4 are removed selectively until side faces of the second semiconductor layer 2 are exposed in such a way that a stripe shape containing the light- emitting part and a stripe of the waveguide part is left; side faces of the second semiconductor layer 2 are filled by using a mass transport method. Thereby, it is possible to limit the number of crystal growth operations to two.
公开日期	1990-04-26
申请日期	1988-10-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86668]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ABE YUJI,OTSUKA KENICHI,SUGIMOTO HIROSHI,et al. Manufacture of semiconductor laser. JP1990114588A. 1990-04-26.

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