| Blue light semiconductor laser | |
| SUZUKI TOORU | |
| 1985-08-27 | |
| 著作权人 | NIPPON DENKI KK |
| 专利号 | JP1985164382A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Blue light semiconductor laser |
| 英文摘要 | PURPOSE:To realize a high-efficiency visible-light semiconductor laser by a method wherein a crystal, for example ZnS, is used meeting well the lattice alignment conditions of chalcopyrite crystal Cu(AlXGa1-X)S2 equipped with a large band gap. CONSTITUTION:In a semiconductor laser device provided with a double hetero- junction structure wherein an activation layer 14 is sandwiched between clad layers 15, 16, a substrate crystal 11 is composed of ZnS or GaP or Si, the activation layer 14 is composed of Cu(AlXGa1-X)S2, the clad layer 15 of ZuS, clad layer 16 of ZuS or ZnSe or Cu(AlYGa1-Y)S2 with the X and Y satisfying 0 |
| 公开日期 | 1985-08-27 |
| 申请日期 | 1984-02-06 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86667]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | SUZUKI TOORU. Blue light semiconductor laser. JP1985164382A. 1985-08-27. |
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