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	Semiconductor laser device
	WATANABE HITOSHI; FUJIWARA MASATOSHI; TAKEMOTO AKIRA; KAKIMOTO SHOICHI
	1990-12-10
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990298091A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To enable the oscillation of single wavelength without a mode skipping even at the time of high output by thickening a thickness of a barrier layer in adjacency of a region where a light density is relatively high, compared with other regions, in an element of a distributor-feedback-type semiconductor laser device comprising a barrier layer structure. CONSTITUTION:After an n-type barrier layer 6 is formed on an InGaAsP active layer 2, the both side ends are etched smoothly while leaving the center part. Furthermore, an InGaAs guide layer 4 is grown on said n-type barrier layer 6, after which diffraction gratings 5 are formed. Then, a clad layer is re-grown. Thus, if a thickness of the n-type barrier layer 6 is thicker in a specified region, the connection of the diffraction gratings and the light becomes weak in that region. Namely, a connection constant K of the diffraction gratings 5 is small. Accordingly, as the ununiformity of a light density distribution does not become so remarkable at the time of high output, the single mode oscillation can be obtained.
公开日期	1990-12-10
申请日期	1989-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86525]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	WATANABE HITOSHI,FUJIWARA MASATOSHI,TAKEMOTO AKIRA,et al. Semiconductor laser device. JP1990298091A. 1990-12-10.

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