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	Integrated semiconductor laser device
	WATANABE YUKIO; MOGI NAOTO
	1986-08-14
著作权人	株式会社東芝
专利号	JP1986182291A
国家	日本
文献子类	发明申请
其他题名	Integrated semiconductor laser device
英文摘要	PURPOSE:To obtain an integrated semiconductor device having excellent heat- dissipating characteristics by extending a semiconductor layer constituting a semiconductor photodetecting element, directly bonding a contact layer for a semiconductor laser device onto the the semiconductor layer, dividing these semiconductor layer and contact layer at fine intervals and each facing the divided devices. CONSTITUTION:An i-type semiconductor substrate 21 constituting an integrated semiconductor photodetecting element 20 is fixed onto a stem 10 made of copper by using adhesives, an N-type layer 22 is deposited on the substrate 21, and a P-type region 23 is diffused and formed near one end section of the layer 22, thus shaping a P-N photodiode. Consequently, the region 23 is employed as a light-receiving section 24, a p electrode 26 is applied to the light-receiving section 24, and p electrodes 60 used in common with p electrodes for an afterward shaped integrated semiconductor laser element 30 are formed onto the layer 22. A P-type GaAs contact layer 35, a P-type GaAlAs clad layer 34, a GaAs active layer 33, an N-type GaAlAs clad layer 32, an N-type GaAs substrate 31 and an N electrode 36 constituting the element 30 are laminated and shaped at the other end section of the layer 22, and the elements 20 and 30 are each divided and these are faced.
公开日期	1986-08-14
申请日期	1985-02-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/86494]
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	WATANABE YUKIO,MOGI NAOTO. Integrated semiconductor laser device. JP1986182291A. 1986-08-14.

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