| Nitrogen sources for molecular beam epitaxy | |
| JOHNSON, RALPH, H.; GUENTER, JAMES, K.; KIM, JIN, K. | |
| 2004-03-18 | |
| 著作权人 | HONEYWELL INTERNATIONAL INC. |
| 专利号 | WO2004022819A1 |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitrogen sources for molecular beam epitaxy |
| 英文摘要 | MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline substrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen-containing layers can be formed using such nitrogen sources. |
| 公开日期 | 2004-03-18 |
| 申请日期 | 2003-09-04 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85526]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HONEYWELL INTERNATIONAL INC. |
| 推荐引用方式 GB/T 7714 | JOHNSON, RALPH, H.,GUENTER, JAMES, K.,KIM, JIN, K.. Nitrogen sources for molecular beam epitaxy. WO2004022819A1. 2004-03-18. |
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