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	Semiconductor laser device
	NOJIRI HIDEAKI; HARA TOSHITAMI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI
	1987-11-20
著作权人	CANON INC
专利号	JP1987268179A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To form an image excellently by shaping an irregular stripe to one main surface of a semiconductor substrate so that angles formed by each resonance direction of semiconductor lasers and resonance surfaces differ and making respective beam outgoing direction differ when beams from each of the semiconductor lasers are emitted from the resonator surfaces. CONSTITUTION:A resist pattern 120 shaped onto a GaAs substrate 101 has 5mum width and 500mum length along the direction of resonance, and recessed grooves are formed through reactive ion etching, using the pattern 120 as a mask. The etching grooves are shaped, the photo-resist pattern 120 is peeled, and GaAs and GaAlAs are grown on the substrate acquired in an epitaxial manner in succession, thus preparing lasers having double hetero-structure. Upper P-type electrodes 111c-115c are isolated through etching, and five lasers in which beam outgoing directions are each made to differ in the same surface are formed in a monolithic manner. The lasers are shaped so that angles shaped by the extensions 111A-115A of a stripe and normals 118 erected to resonance surfaces 116 and 117 respectively reach phiA-phiE. Accordingly, an image can be formed excellently onto a medium.
公开日期	1987-11-20
申请日期	1986-05-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85165]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	NOJIRI HIDEAKI,HARA TOSHITAMI,SEKIGUCHI YOSHINOBU,et al. Semiconductor laser device. JP1987268179A. 1987-11-20.

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