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	Semiconductor light emitting device
	KONDO KENTARO
	1987-11-21
著作权人	FUJITSU LTD
专利号	JP1987269388A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To obtain an efficient output of light emission in favorable mode by providing a first area having a diffraction grating and making an opposite end adjacent to the first area to have a second area without the diffraction grating at a reflection preventive surface and also by emitting lights out of the reflection preventive surface after amplifying the lights at the second area although the initial lights are emitted from the first area. CONSTITUTION:Various layers; i.e. N-type InP confinement layer 2, N-type InGaAsP waveguide layer 3, non-doping InGaAsP active layer 4, P-type InP cofinement layer 5, P-type InGaAsP layer 6 make epitaxial growth on a N-type InP semiconductor substrate A DFB diffraction grating 7 is formed to have a length about one half as long as a total laser length L at an upper face of N-type InP confinement layer 2 prior to performing epitaxial growth of N-type InGaAsP waveguide layer 3 by applying, for example, a two-beam interference system according to helium-cadmium beams. The rest area that is about one half of the total area does not have the diffraction grating 7 but is used as an amplification area. The width of stripe area is converted into a width of about 2mum at the active layer 4 by mesa-etching and P-type InP layer and N-type InP layer perform a buried growth, resulting in an arrangement of P side electrodes 8R, 8A, and N side electrode 9 and reflecting preventive coating 10 is provided at both cleaved laser end faces.
公开日期	1987-11-21
申请日期	1986-05-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85134]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KONDO KENTARO. Semiconductor light emitting device. JP1987269388A. 1987-11-21.

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