| Semiconductor laser with a lattice structure | |
| FORCHEL, ALFRED; KAMP, MARTIN | |
| 2003-12-30 | |
| 著作权人 | FORCHEL ALFRED |
| 专利号 | US6671306 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser with a lattice structure |
| 英文摘要 | A semiconductor laser (22) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, a waveguide ridge (15) arranged at a distance from the laser layer, and a strip-shaped lattice structure (23) arranged in parallel to the laser layer is disclosed. The lattice structure (23) includes two structural regions (24, 25) which are arranged on both sides of the waveguide ridge (15) and are formed at a distance from the laser layer (13) above the laser layer (13). A process for the production of such a semiconductor laser is also disclosed. |
| 公开日期 | 2003-12-30 |
| 申请日期 | 1999-04-21 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85024]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FORCHEL ALFRED |
| 推荐引用方式 GB/T 7714 | FORCHEL, ALFRED,KAMP, MARTIN. Semiconductor laser with a lattice structure. US6671306. 2003-12-30. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论