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	Submount for optical semiconductor element
	SAITOU KATSUTOSHI; TOKUDA MASAHIDE; IMAI KUNINORI; MIZUISHI KENICHI; CHIBA KATSUAKI; KOBAYASHI MASAMICHI
	1985-04-26
著作权人	HITACHI LTD
专利号	JP1985074539A
国家	日本
文献子类	发明申请
其他题名	Submount for optical semiconductor element
英文摘要	PURPOSE:To obtain the submount which withstands high temperature and high humidity by a method wherein the barrier layer to be provided on a wiring layer is constituted by Pt. CONSTITUTION:A wiring layer 41 is formed by performing a vacuum-deposition of Au layer 37, a Ti layer 38 and a Pt barrier main body layer 30 are successively vapor-deposited, and a barrier layer 41 is formed. Then, a solder layer- shaped window is provided on a resist layer 43. Subsequently, Pb-Sn solder 44 is vapor-deposited on the surface of the resist layer 43 in the state wherein a resist film is coated. Then, a sample is soaked in an organic solvent in which a photoresist film will be dissolved, supersonic vibrations are applied to the solvent, the resist film is removed by dissolution, and a solder layer 52 is selectively formed. Lastly, a heat conductive SiC ceramic substrate 31 is cut in accordance with the patterning pitc of the solder layer, and a submount 50 is manufacture. Then, after a semiconductor lase chip 53 has been die-conded on the solder layer 52, the submount is soldered on a heat dissipating member 56. Then, an Au wire 55 is supersonic die-bonded on the upper electrode 54. Also, an Au wire 57 is supersonic die-bonded on a barrier 42, and a chip lower electrode is connected to the outside part.
公开日期	1985-04-26
申请日期	1983-09-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84756]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	SAITOU KATSUTOSHI,TOKUDA MASAHIDE,IMAI KUNINORI,et al. Submount for optical semiconductor element. JP1985074539A. 1985-04-26.

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