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	半導体レーザーの製造方法
	杉本 満則
	1994-10-19
著作权人	NIPPON ELECTRIC CO
专利号	JP1994082883B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザーの製造方法
英文摘要	PURPOSE:To obtain a semiconductor laser which has a preferable optoelectric conversion efficiency and hardly causes a high order mode oscillation by forming at least parts of an active layer and a clad layer in a high resistance region, and using an active layer formed on the top of a mesa stripe as a main light emitting region. CONSTITUTION:A mesa stripe 17 is formed by a normal photoetching method on a GaAs substrate 20. Then, a crystal growth is performed by an MBE method. Initially, an N type clad layer 21 is grown. The beams of a Ga cell, an As cell, Al cell and an Si cell are collided to the substrate 20, and the layer 21 grown on a mesa stripe side face 16 becomes a non-doped layer. Accordingly, a high resistance region 28 is formed. Then, an active layer 22 is similarly grown by Si doping. Subsequently, a P type clad layer 23 is grown. This layer becomes a high resistance region 30. Eventually, to produce preferably ohmic contact, a cap layer 24 (P+GaAs) is formed. After the crystal growth, an SiO2 film is formed, the SiO2 film 25 on the top 15 of the mesa strip is removed by a normal photoetching method, and a P type electrode 26 and an N type electrode 27 are formed.
公开日期	1994-10-19
申请日期	1983-03-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84631]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	杉本 満則. 半導体レーザーの製造方法. JP1994082883B2. 1994-10-19.

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