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	Manufacture of semiconductor laser element
	WADA HIROSHI; HORIKAWA HIDEAKI; OGAWA HIROSHI; KAWAI YOSHIO
	1988-10-18
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1988250887A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser element
英文摘要	PURPOSE:To obtain a DFB laser element which can operate at a high output by crystal growing a quaternary mixed crystal of GaInAsP by a liquid growing method in and on a V-shaped groove, and protecting the grating on a light emitting region with an SiO2 film. CONSTITUTION:A quaternary mixed crystal of GaInAsP is grown by a liquid growth method on a bent active layer 27 to form an optical guide layer 28 having a flat surface, a wavy grating 28a is formed on the flat surface, a stripelike silicon oxide film 29 is formed on a part directly above the light emitting region of the grating 28a, and a clad layer 30 and a cap layer 31 are formed at both sides. Thus, leakage currents to current constriction layers 23, 24 are small to operate it at a high output, a flat grown surface is obtained even on the bent surface, and the grating 28a on the region is protected by an SiO2 film 29. Accordingly, a stable distributed feedback DFB operation is obtained.
公开日期	1988-10-18
申请日期	1987-04-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84615]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	WADA HIROSHI,HORIKAWA HIDEAKI,OGAWA HIROSHI,et al. Manufacture of semiconductor laser element. JP1988250887A. 1988-10-18.

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