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	Semiconductor laser and its manufacture
	UEDA OSAMU; KOTANI TAKESHI
	1983-08-05
著作权人	FUJITSU KK
专利号	JP1983131789A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and its manufacture
英文摘要	PURPOSE:To enable single mode oscillation, in which the shape of a buried active layer is formed in a vertical bilateral symmetrical shape by semiconductor laser structure with the buried active layer, a section thereof takes a convex lens shape, and to obtain a laser spot close to a point. CONSTITUTION:Manufacture of the titled device is as follows. A striped groove 32 is formed onto epitaxial layers 21, 22, 23 grown onto an n-InP substrate 21 in succession, and a layer which must function as a clad layer 24 is grown onto the groove so that a sectional shape in the groove 32 takes a concave surface form. A layer which must function as the active layer 25 is grown onto the layer which must function as the clad layer 24, a protective mask 33 narrower than stripe width is formed at the center of the stripe section of the surface, and the section of the active layer 25 is formed to a convex lens shape through etching from the upper surface of the mask. The film 33 is removed through etching, a clad layer 26 and a constricted current layer 27 are grown through a liquid epitaxial growth method again, cadmium (Cd) is diffused and p-type region is formed, a p-type electrode and an n-type electrode are formed, and the laser element is completed.
公开日期	1983-08-05
申请日期	1982-01-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84540]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	UEDA OSAMU,KOTANI TAKESHI. Semiconductor laser and its manufacture. JP1983131789A. 1983-08-05.

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