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	Semiconductor light emitting device
	ASANO, HIDEKI
	2011-09-20
著作权人	NICHIA CORPORATION
专利号	US8023545
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting device
英文摘要	In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided.
公开日期	2011-09-20
申请日期	2008-12-08
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84496]
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	ASANO, HIDEKI. Semiconductor light emitting device. US8023545. 2011-09-20.

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