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	Semiconductor laser
	OTAKI KANAME
	1990-10-12
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990253691A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser which realizes the reduction of ineffectual current and a high output by a method wherein the impurity concentration of a first conductivity type second lower cladding layer directly under an active region is selectively increased. CONSTITUTION:The impurity in a first conductivity type first lower cladding layer 2 is introduced into a first conductivity type second lower cladding layer 3 through the contact region between the first conductivity first lower cladding layer 2 and the first conductivity type second lower cladding layer 3 by thermal diffusion to form an impurity region 9 which is formed by increasing the impurity concentration of the first conductivity type second lower cladding layer 3 directly under an active region 8 selectively. In other words, the impurity concentration of the first conductivity type second lower cladding layer 3 is selectively increased. With this constitution, a reactive current which does not contribute to an oscillation can be reduced and, not only light output vs. current characteristics at the time of a high output operation can be improved but also power consumption can be saved by the reduction of a threshold current and the improvement of a light emission efficiency, so that the life of a laser device can be improved.
公开日期	1990-10-12
申请日期	1989-03-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84435]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	OTAKI KANAME. Semiconductor laser. JP1990253691A. 1990-10-12.

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