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	Semiconductor laser element
	YAMAMOTO SABURO; MORIMOTO TAIJI; SASAKI KAZUAKI; KONDO MASAKI
	1990-03-20
著作权人	SHARP CORP
专利号	JP1990079485A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To provide a semiconductor laser element which can reduce the return light noise effectively by using a Si dopant for an n-type electroconductive semiconductor layer in a double hetero joint type semiconductor laser element, in which an active layer is pinched by a p-type and n-type electroconductive semiconductor layers having a larger prohibit band width than the active layer. CONSTITUTION:After an n-type GaAs current checking layer 6 is grown on a p-type GaAs base board 1, a V-shaped groove 9 is formed so that the tip reaches from the surface of this current checking layer to the substrate Then a Mg-doped p-type Ga0.45Al0.55As clad layer 2 is grown to fill the V-shaped groove 9. Further an undoped Ga0.87Al0.13As active layer 3, a Si-doped n-type Ga0.45Al0.55As clad layer 4, and a Te-doped n-type GaAs cap layer 5 are grown. An n-side electrode 7 of Au-Ge is formed on the surface of this cap layer, and the rear surface of the substrate 1 is ground into a specified thickness, and after forming of a p-side electrode 8 of Au-Zn, a resonance surface is formed by cleavage. This accomplishes a vertical mode and return light noise characteristic, in which oscillation occurs in a single vertical mode with its mode ratio approx. 10:1, and the relative noise strength is as low as under -130dB/Hz.
公开日期	1990-03-20
申请日期	1988-09-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84351]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	YAMAMOTO SABURO,MORIMOTO TAIJI,SASAKI KAZUAKI,et al. Semiconductor laser element. JP1990079485A. 1990-03-20.

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