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	Semiconductor laser device
	WAKANA SHINICHI; FURUKAWA YASUO
	1987-06-01
著作权人	FUJITSU LTD
专利号	JP1987119992A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a required polarization mode by a small apparatus which is easy to assemble by a method wherein a structural anisotropic medium, composed of alternately laminated media with different specific inductive capacities, is provided at the emitting end surface or in the waveguide region of a semiconductor laser. CONSTITUTION:A structural anisotropic medium 7 is formed by arranging medium 1 and medium 2 which have specific inductive capacities different from each other alternately at the emitting end surface of or inside a semiconductor laser (LD). The boundary surfaces 8 between the media 1 and 2 are inclined to have an angle of 45 deg. relative to the junction surface of the LD. With this constitution, the laser oscillation is induced by using the boundary surface between the LD and the medium 7 as a reflective surface of a resonator and the output light is oscillated with a polarization mode which is determined by the thickness T of the medium 7, the widths t1 and t2 of the media 1 and 2. Therefore, by selecting those parameters, a required polarization mode can be obtained and an optical system can be assembled easily in a small size. Moreover, by providing the media 7 on both ends of the LD, clockwise or counterclockwise circular polarization can be obtained.
公开日期	1987-06-01
申请日期	1985-11-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84269]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	WAKANA SHINICHI,FURUKAWA YASUO. Semiconductor laser device. JP1987119992A. 1987-06-01.

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