QQ客服 官方微博 反馈留言

	Semiconductor laser and manufacture thereof
	YAMAZOE YOSHIMITSU; NISHIZAWA HIDEAKI; OKUDA HIROSHI
	1983-06-30
著作权人	SUMITOMO DENKI KOGYO KK
专利号	JP1983110086A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To simplify the manufacturing process as well as to obtain the buried type element of high performance by a method wherein an insulating thin film material having a striped type window is provided on the first conductive type substrate, and a clad layer, consisting of the first or the second conductive type active layer and the second conductive type clad layer and a contact layer, are laminated one upon another. CONSTITUTION:An amorphous insulating material thin film 2 such as SiO2 is grown on an N type InP substrate 7 using CVD method, and an exposed surface 13 is generated on the substrate 7 corresponding to a strap forming region by performing a photolithographic method and a chemical etching method. Then, utilizing the characteristic wherein a single crystal layer alone is generated on the exposed surface 13 when an epitaxial growing method is performed, an N type first clad layer 6, an In1-x, Gax, ASy, P1-y, layer 3 are laminated and epitaxially grown on the whole surface. Through these procedures, the desired striped buried structure is obtained, and a P type and an N type electrodes 3 and 9 are coated on the front and the back sides.
公开日期	1983-06-30
申请日期	1981-12-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84127]
专题	半导体激光器专利数据库
作者单位	SUMITOMO DENKI KOGYO KK
推荐引用方式 GB/T 7714	YAMAZOE YOSHIMITSU,NISHIZAWA HIDEAKI,OKUDA HIROSHI. Semiconductor laser and manufacture thereof. JP1983110086A. 1983-06-30.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。